RIR Power Electronics Limited has received significant support from the Government of Odisha to develop its Silicon Carbide (SiC) semiconductor manufacturing facility in Bhubaneswar. The Electronics & Information Technology Department of Odisha, through the Odisha Computer Application Center (OCAC), has approved fiscal support for Phase 1 of the project. This capital subsidy agreement will aid in the pro-rata disbursement of the capital subsidy for the project, as the state government has already backed the facility’s approval by the State-Level Single Window Clearance Committee (SLSWCC).
The project, with a total cost of ~₹618 crore for both Phase 1 and Phase 2, aims to make Odisha a hub for high-power semiconductor manufacturing. Phase 1 will see a capital expenditure of ~₹65 crore, with an eligible government subsidy of ~₹32 crore.
Dr. Harshad Mehta, Chairman & Director of RIR Power Electronics, expressed gratitude towards the Odisha government, stating, “This forward-thinking support empowers us to introduce advanced technologies and manufacturing capabilities to the state. The development of this facility is a milestone for innovation, job creation, and energy-efficient solutions in electric vehicles, renewable energy, and power electronics across India.”
The new SiC semiconductor facility will focus on manufacturing high-power SiC MOSFETs, IGBTs, and diodes, with voltage ratings ranging from 3.3 kV to 20 kV. These components will cater to industries like electric vehicles (EVs), renewable energy, power grids, and industrial automation.
SiC semiconductors, known for their high performance and energy efficiency, will revolutionize power-based technologies, enhancing local manufacturing capacity and driving sustainable industrial growth across India.
The plant is aligned with India’s vision of advancing the ‘Make in India’ initiative and is expected to make a significant contribution to the country’s semiconductor industry.
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